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DS1200
DS1200 Serial RAM Chip
FEATURES
PIN ASSIGNMENT
VCC RST DQ CLK GND 1 2 3 4 5 10 9 8 7 6 NC NC GND NC VBAT
* 1024 bits of read/write memory * Low data retention current for battery backup applications
* 4 million bits/second data rate * Single byte or multiple byte data transfer capability * No restrictions on the number of write cycles * Low-power CMOS circuitry * Applications include:
- - - - - - - software authorization computer identification system access control secure personnel areas calibration automatic system setup traveling work record
10-Pin DIP (300 MIL) See Mech. Drawings Section VCC NC RST DQ NC CLK NC GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 NC NC NC GND NC NC NC VBAT
16-Pin SOIC (300 MIL) See Mech. Drawings Section
PIN DESCRIPTION
VCC RST DQ CLK GND VBAT NC - - - - - - - +5 Volts RESET Data Input/Output Clock Ground Battery (+) No Connection
DESCRIPTION
The DS1200 Serial RAM Chip is a miniature read/write memory which can randomly access individual 8-bit strings (bytes) or sequentially access the entire 1024-bit contents (burst). Interface cost to a microprocessor is minimized by on-chip circuitry which permits data transfers with only three signals: CLOCK, RST, and DATA INPUT/OUTPUT. Nonvolatility can be achieved by connecting a battery of 2 to 4 volts at the battery input VBAT. A load of 0.5 A should be used to size the external battery for the required data retention time. If nonvolatility is not required the VBAT pin should be grounded. For a complete description of operating conditions, electrical characteristics, bus timing, and signal descriptions other than VBAT, see the DS1201 Electronic Tag 1024-Bit data sheet.
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